http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SSP45N10 45a , 100v , r ds(on) 22 m ? n-channel enhancement mode mosfet 26-oct-2013 rev. a page 1 of 4 s op - 8pp top view 45n10 = date code rohs compliant product a suffix of -c specifies halogen and lead-free description the SSP45N10 is the highest performance trench n-ch mosfets with extreme high cell density , which prov ide excellent r ds(on) and gate charge for most of the synchronous buck converter applications .the SSP45N10 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. features simple drive requirement small package outline marking package information absolute maximum ratings ( t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v t c =25c 45 continuous drain current 1 , v gs @10v t c =100c i d 28 a pulsed drain current 2 t c =25c i dm 100 a power dissipation 4 t c =25c p d 90 w single pulse avalanche energy 3 e as 98 mj single pulse avalanche current i as 41 a operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum junction to case 1 r jc 1.4 c / w maximum junction to ambient 1 r ja 36 c / w package mpq leader size sop-8pp 3k 13 inch millimeter millimeter ref. min. max. ref. min. max. a 0.80 1.00 0 10 b 5.3 bsc. b 5.2 bcs c 0.15 0.25 c 0.20 0.50 d 3.8 bcs. d 1.27bsc e 6.05 bcs. e 5.65 bcs. f 0.03 0.30 f 0.10 0.40 g 4.35 bcs. g 1.3 bcs. l 0.40 0.70
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SSP45N10 45a , 100v , r ds(on) 22 m ? n-channel enhancement mode mosfet 26-oct-2013 rev. a page 2 of 4 electrical characteristics (t a =25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate-threshold voltage v gs(th) 2.5 - 4.5 v v ds =v gs , i d =250 a forward transconductance g fs - 27 - s v ds =5v, i d =30a gate resistance r g - 1.9 3.8 f=1mhz gate-body leakage current i gss - - 100 na v gs = 20v t j =25c - - 1 v ds =80v, v gs =0 drain-source leakage current t j =55c i dss - - 5 a v ds =80v, v gs =0 - 19 22 v gs =10v, i d =30a drain-source on-resistance 2 r ds(on) - 25 30 m v gs =7v, i d =15a dynamic total gate charge q g - 27.6 - gate-source charge q gs - 11.4 - gate-drain (miller) charge q gd - 7.9 - nc v ds =80v, v gs =10v, i d =30a turn-on delay time 2 t d(on) - 15.6 - rise time t r - 17.2 - turn-off delay time t d(off) - 16.8 - fall time t f - 9.2 - ns v dd =50v, v gs =10v, r g =3.3 , i d =30a input capacitance c iss - 1890 - output capacitance c oss - 268 - reverse transfer capacitance c rss - 67 - pf v gs =0, v ds =15v, f=1.0mhz guaranteed avalanche chatacteristics single pulse avalanche energy 5 eas 53 - - mj v dd =50v,l=0.1mh, i as =30a source-drain diode diode forward voltage 2 v sd - - 1 v i s =1a, v gs =0 continuous source current 1.6 i s - - 45 a pulsed source current 2.6 i sm - - 100 a v d =v g =0, force current reverse recovery time t rr - 34 - ns reverse recovery charge q rr - 47 - nc i f =30a, t j =25c di/dt=100a/ s notes: 1. the data tested by surface mounted on a 1 inch2 fr-4 board with 2oz copper , Q 10sec , 125 /w at steady state 2. the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3. the eas data shows max. rating . the test condi tion is v dd =25v,v gs =10v,l=0.1mh,i as =53.8a 4. the power dissipation is limited by 150 junction temperature 5. the min. value is 100% eas tested guarantee. 6. the data is theoretically the same as id and id m , in real applications , should be limited by tot al power dissipation
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SSP45N10 45a , 100v , r ds(on) 22 m ? n-channel enhancement mode mosfet 26-oct-2013 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SSP45N10 45a , 100v , r ds(on) 22 m ? n-channel enhancement mode mosfet 26-oct-2013 rev. a page 4 of 4 characteristic curves
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